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HCC4034B 데이터시트(PDF) 7 Page - STMicroelectronics |
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HCC4034B 데이터시트(HTML) 7 Page - STMicroelectronics |
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7 / 16 page ![]() DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25°C, CL = 50pF, RL = 200kΩ, typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns) Test Conditions Value Symbol Parameter V DD (V) Min. Typ. Max. Unit tPHL,tPLH Propagation Delay Time : A (B) Parallel Data in to B (A) Parallel Data Out 5 350 700 ns 10 120 240 15 85 170 tPLZ,tPHZ tPZL,tPZH 3-state Propagation Delay Time A/B or AE to ”A” OUT 5 200 400 ns 10 80 160 15 60 120 tTHL,tTLH Transition Time 5 100 200 ns 10 50 100 15 40 80 tsetup Data Setup Time Serial Data to Clock 5 80 160 ns 10 30 60 15 20 40 Parallel Data to Clock 5 25 50 ns 10 15 30 15 10 20 tw High-level Pulse Width, AE, P/S, A/S 5 175 350 ns 10 70 140 15 40 80 fCL Maximum Clock Frequency 5 2 4 MHz 10 5 10 15 7 14 tW Clock Pulse Width 5 125 250 ns 10 50 100 15 35 70 tr,tf* Clock Input Rise or Fall Time 5,10,15 15 µs * If more than one unit is cascaded. tr should be made less than or equal to the sum of the transition time and the fixed propagation delay of the output of the driving stage for the estimated capacitive load. HCC/HCF4034B 7/16 |
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