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STTH1506DPI 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STTH1506DPI
상세설명  Tandem 600V HYPERFAST BOOST DIODE
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STTH1506DPI
October 2003 - Ed: 2A
Tandem 600V HYPERFAST BOOST DIODE
®
The
TURBOSWITCH
“H”
is
an
ultra
high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dIF/dt.
DESCRIPTION
s
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS
MODE
POWER
FACTOR
CORRECTORS
AND
HARD
SWITCHING
CONDITIONS
s
DESIGNED FOR HIGH DI/DT OPERATION.
HYPERFAST
RECOVERY
CURRENT
TO
COMPETE WITH SIC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
s
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
s
INSULATION
(2500VRMS)
ALLOWS
PLACEMENT
ON
SAME
HEATSINK
AS
MOSFET AND FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
s
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
s
PACKAGE CAPACITANCE: C=16pF
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward current
26
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
130
A
Ipeak
Peak current waveform
δ = 0.15 Tc = 120°C
35
A
Tstg
Storage temperature range
-65 +150
°C
Tj
Maximum operating junction temperature
+ 150
°C
ABSOLUTE RATINGS (limiting values)
IF(AV)
15 A
VRRM
600 V
Tj (max)
150 °C
VF (max)
2.4 V
IRM (typ.)
4.8 A
trr (typ.)
16 ns
MAJOR PRODUCTS CHARACTERISTICS
12
1
2
DOP3I
(insulated)


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