STTH1506DPI datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STTH1506DPI

3/5

02468

δ=tp/T

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

P(W)

(A)

F(AV)

Fig. 1: Conduction losses versus average current.

100

110

120

130

012345678

(A)

(V)

T =25°C

(maximum values)

T =125°C

(maximum values)

T =125°C

(typical values)

Fig. 2: Forward voltage drop versus forward

current.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Z/R

th(j-c)

t (s)

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

(A)

200

400

600

800

1000

dI /dt(A/µs)

I=I

F(AV)

I =0.5 x I

F(AV)

I =0.25 x I

F(AV)

I =2 x I

F(AV)

V =400V

T =125°C

Fig. 4: Peak reverse recovery current versus dIF/dt

(typical values).

t (ns)

200

400

600

800

1000

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

Fig. 5: Reverse recovery time versus dIF/dt

(typical values).

Q (nC)

100

120

140

160

180

200

220

240

200

400

600

800

1000

V =400V

T =125°C

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

Fig. 6: Reverse recovery charges versus dIF/dt

(typical values).

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