STM32F101RBT6 datasheet(49/101 Pages) STMICROELECTRONICS

49 / 101 page

DocID13586 Rev 17

49/101

STM32F101x8, STM32F101xB

Electrical characteristics

100

Figure 22. Typical application with a 32.768 kHz crystal

5.3.7

Internal clock source characteristics

The parameters given in Table 23 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 8.

High-speed internal (HSI) RC oscillator

ai14129b

OSC32_OU T

OSC32_IN

fLSE

CL1

STM32F10xxx

32.768 KH z

resonator

Resonator with

integrated capacitors

Bias

controlled

gain

CL2

Table 23. HSI oscillator characteristics(1)

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

DuCy(HSI) Duty cycle

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from

the ST website www.st.com.

1(3)

3. Guaranteed by design, not tested in production.

Factory-

calibrated



(4) (5)

4. Based on characterization, not tested in production.

5. The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified

range.

TA = –40 to 105 °C

–2

2.5

TA = –10 to 85 °C

–1.5

2.2

TA = 0 to 70 °C

–1.3

TA = 25 °C

–1.1

1.8

tsu(HSI)(4)

HSI oscillator

startup time

-1

µs

IDD(HSI)(4)

HSI oscillator power

consumption

100

µA

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