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STM32F101RBT6 데이터시트(PDF) 34 Page - STMicroelectronics

부품명 STM32F101RBT6
상세설명  Medium-density access line, ARM®-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
PDF  101 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32F101RBT6 데이터시트(HTML) 34 Page - STMicroelectronics

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Electrical characteristics
STM32F101x8, STM32F101xB
34/101
DocID13586 Rev 17
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 10 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
VIN
I/O input voltage
Standard IO
–0.3
VDD + 0.3
V
FT IO(3)
2 V < VDD  3.6 V –0.3
5.5
VDD = 2 V
–0.3
5.2
BOOT0
0
5.5
PD
Power dissipation at TA = 85 °C
(4)
LQFP100
-
434
mW
LQFP64
-
444
LQFP48
-
363
UFQFPN48
-
624
VFQFPN36
-
1000
TA
Ambient temperature
Maximum power dissipation
–40
85
°C
Low power dissipation(5)
–40
105
TJ
Junction temperature range
-
–40
105
1. When the ADC is used, refer to Table 41: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.7: Thermal
characteristics on page 90).
5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.7: Thermal characteristics on page 90).
Table 8. General operating conditions (continued)
Symbol
Parameter
Conditions
Min
Max
Unit
Table 9. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time
rate
-
0
∞
µs/V
VDD fall time
rate
20
∞



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