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STM32F101RBT6 데이터시트(PDF) 34 Page - STMicroelectronics |
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STM32F101RBT6 데이터시트(HTML) 34 Page - STMicroelectronics |
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34 / 101 page ![]() Electrical characteristics STM32F101x8, STM32F101xB 34/101 DocID13586 Rev 17 5.3.2 Operating conditions at power-up / power-down Subject to general operating conditions for TA. 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 10 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 8. VIN I/O input voltage Standard IO –0.3 VDD + 0.3 V FT IO(3) 2 V < VDD 3.6 V –0.3 5.5 VDD = 2 V –0.3 5.2 BOOT0 0 5.5 PD Power dissipation at TA = 85 °C (4) LQFP100 - 434 mW LQFP64 - 444 LQFP48 - 363 UFQFPN48 - 624 VFQFPN36 - 1000 TA Ambient temperature Maximum power dissipation –40 85 °C Low power dissipation(5) –40 105 TJ Junction temperature range - –40 105 1. When the ADC is used, refer to Table 41: ADC characteristics. 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 3. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled. 4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.7: Thermal characteristics on page 90). 5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Table 6.7: Thermal characteristics on page 90). Table 8. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit Table 9. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 20 ∞ |
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