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FT201XS-R 데이터시트(PDF) 20 Page - Future Technology Devices International Ltd.

부품명 FT201XS-R
상세설명  FT201X USB I2C SLAVE IC
PDF  49 Pages
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제조업체  FTDI [Future Technology Devices International Ltd.]
홈페이지  http://www.ftdichip.com
Logo FTDI - Future Technology Devices International Ltd.

FT201XS-R 데이터시트(HTML) 20 Page - Future Technology Devices International Ltd.

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Copyright © 2014 Future Technology Devices International Limited
20
FT201X USB I2C SLAVE IC Datasheet
Version 1.4
Document No.: FT_000627 Clearance No.: FTDI# 264
Parameter
Description
Minimum
Typical
Maximum
Units
Conditions
Voh
Output Voltage High
1.62
VCCIO
VCCIO
V
Ioh = +/-2mA
I/O Drive strength*
= 4mA
1.62
VCCIO
VCCIO
V
I/O Drive strength*
= 8mA
1.62
VCCIO
VCCIO
V
I/O Drive strength*
= 12mA
1.62
VCCIO
VCCIO
V
I/O Drive strength*
= 16mA
Vol
Output Voltage Low
0
0.4
V
Iol = +/-2mA
I/O Drive strength*
= 4mA
0
0.4
V
I/O Drive strength*
= 8mA
0
0.4
V
I/O Drive strength*
= 12mA
0
0.4
V
I/O Drive strength*
= 16mA
Vil
Input low Switching
Threshold
0.77
V
LVTTL
Vih
Input High Switching
Threshold
1.6
V
LVTTL
Vt
Switching Threshold
0.77
V
LVTTL
Vt-
Schmitt trigger negative
going threshold voltage
0.557
V
Vt+
Schmitt trigger positive
going threshold voltage
0.893
V
Rpu
Input pull-up resistance
40
75
190
KΩ
Vin = 0
Rpd
Input pull-down
resistance
40
75
190
KΩ
Vin =VCCIO
Iin
Input Leakage Current
-10
+/-1
10
μA
Vin = 0
Ioz
Tri-state output leakage
current
-10
+/-1
10
μA
Vin = 5.5V or 0
Table 6.6 I/O Pin Characteristics VCCIO = +1.8V (except USB PHY pins)
* The I/O drive strength and slow slew-rate are configurable in the MTP memory.



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