TP65H030G4PWS Datasheet

R07DS1601EU0200 Rev.2.00

Nov 25, 2025

Page 4

2. Specifications

2.1

Absolute Maximum Ratings

Tc = 25°C unless otherwise stated.

Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such

conditions can adversely impact product reliability and result in failures not covered by warranty.

Symbol

Parameter

Minimum

Maximum

Unit

VDSS

Drain to source voltage (TJ = -55°C to 150°C)

-

650

V

VDSS(TR) , non-repetitive

Transient drain to source voltage, non-repetitive [1]

-

800

VDSS(TR) , repetitive

Transient drain to source voltage, repetitive [2]

-

750

VGSS

Gate to source voltage

-20

+20

PD

Maximum power dissipation at TC = 25°C

-

192

W

ID

Continuous drain current at TC = 25°C

-

55.7

A

Continuous drain current at TC = 100°C

-

35

A

IDM

Pulsed drain current (pulse width: 10µs)

-

230

A

TJ

Operating temperature junction

-55

+150

°C

TS

Storage temperature

-55

+150

°C

TSOLD

Soldering peak temperature [3]

-

260

°C

1.

In off-state, spike duration < 30µs, non-repetitive.

2.

Off-state, spike duration < 5µs.

3.

For 10 sec., 1.6mm from the case.

2.2

Thermal Specifications

Symbol

Condition

Typical Value

Unit

RΘJC

Junction-to-case

0.65

°C/W

RΘJA

Junction-to-ambient

40