TP65H030G4PWS datasheet(1/13 Pages) RENESAS

부품명	TP65H030G4PWS

상세설명	650V SuperGaN® GaN FET in TO-247-3 (source tab)

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Datasheet

TP65H030G4PWS

650V SuperGaN® GaN FET in TO-247-3 (source tab)

R07DS1601EU0200 Rev.2.00

Nov 25, 2025

Page 1

Description

The TP65H030G4PWS 650V, 30mΩ Gallium Nitride

(GaN) FET is a normally-off device using Renesas’

Gen IV plus platform. It combines a state-of-the-art

high voltage GaN HEMT with a low voltage silicon

MOSFET to offer superior performance, standard

drive, ease of adoption and reliability.

The Gen IV plus SuperGaN® platform uses advanced

epi and patented design technologies to simplify

manufacturability while improving efficiency over

silicon via lower gate charge, output capacitance,

crossover loss, and reverse recovery charge.

Benefits

■

Superior normally off architecture with D-mode

GaN HEMT

■

Compatible with standard silicon drivers

■

Enhanced noise immunity with a 4V threshold

voltage with no negative gate drive required

■

Enables high-efficiency, high power density, and

reliable power conversion

■

Facilitates cost-effective GaN adoption reducing

system size, weight, and costs

Product/Schematic Diagrams

TP65H030G4PWS TO-247-3

Cascode Schematic Symbol

Cascode Device Structure

Features

■

Ultra-fast switching Gen IV plus GaN

■

JEDEC-qualified GaN technology

■

Dynamic RDS(on)eff production tested

■

Reduced crossover loss

■

Negligible Qrr

■

RoHS compliant and Halogen-free packaging

Applications

■

AI datacenter and

telecom power supplies

■

E-mobility charging

■

PV inverter

■

UPS

■

BESS

Specifications

VDS (V)

650

VDSS(TR)(V) maximum

800

RDS(on) (mΩ) maximum [1]

41

QOSS (nC) typical

135

QG (nC) typical

24.5

1.

Dynamic RDS(on) (see Figure 17 and Figure 18)

유사한 부품 번호 - TP65H030G4PWS

제조업체	부품명	데이터시트	상세설명
Renesas Technology Corp	TP65H030G4PQS	920Kb / 13P	650V SuperGaN® GaN FET in TOLL (source tab) Nov 25, 2025
Renesas Technology Corp	TP65H030G4PRS	968Kb / 17P	650V SuperGaN® GaN FET in TOLT (source tab) Dec 2, 2025

More results

유사한 설명 - TP65H030G4PWS

제조업체	부품명	데이터시트	상세설명
Transphorm Inc	TP65H015G5WS	362Kb / 7P	650V SuperGaN??FET in TO-247 (source tab)
	TP65H035G4WSQA	726Kb / 13P	650V SuperGaN® FET in TO-247 (source tab) Oct. 29, 21
	TP65H035G4YS	1Mb / 12P	650V SuperGaN® FET in TO-247 (source tab) Oct. 30, 2023
	TP65H050G4WS	1Mb / 13P	650V SuperGaN® FET in TO-247 (source tab) July. 22, 2021
	TP65H050G4YS	1Mb / 12P	650V SuperGaN® FET in TO-247 (source tab) Dec. 14, 2023
	TP65H070G4LSG	1Mb / 12P	650V SuperGaN® GaN FET in PQFN (source tab) August 24, 2023
	TP65H070G4RS	1Mb / 12P	650V SuperGaN® GaN FET in PQFN (source tab) October 31, 2023
	TP65H150G4PS	1Mb / 12P	650V SuperGaN® GaN FET in TO-220 (source tab) August 22, 2023
	TP65H300G4JSGB	1,023Kb / 13P	650V SuperGaN® GaN FET in PQFN (source tab) Apr. 12, 2023
	TP65H300G4LSGB	1Mb / 12P	650V SuperGaN® GaN FET in PQFN (source tab) October 30, 2023

More results

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