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LET9130 데이터시트(PDF) 1 Page - STMicroelectronics |
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LET9130 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() 1/6 PRELIMINARY DATA February, 6 2003 LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % • EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % • GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION DESCRIPTION The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2. Source 3. Gate 1 2 3 M265 epoxy sealed ORDER CODE LET9130 BRANDING LET9130 ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V ID Drain Current 15 A PDISS Power Dissipation (@ Tc = 70 °C) 217 W Tj Max. Operating Junction Temperature 200 °C TSTG Storage Temperature -65 to +200 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.6 °C/W |
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