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M25P10-AVMB3TP/Y 데이터시트(PDF) 38 Page - Numonyx B.V

부품명 M25P10-AVMB3TP/Y
상세설명  1 Mbit, serial Flash memory, 50 MHz SPI bus interface
PDF  51 Pages
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제조업체  NUMONYX [Numonyx B.V]
홈페이지  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M25P10-AVMB3TP/Y 데이터시트(HTML) 38 Page - Numonyx B.V

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DC and AC parameters
M25P10-A
38/51
Table 15.
DC characteristics (device grade 3)(1)
1.
Only for products with process technology code X.
Symbol
Parameter
Test condition (in addition to
those in Table 10)
Min(2)
2.
Preliminary data.
Max(2)
Unit
ILI
Input Leakage current
± 2
µA
ILO
Output Leakage current
± 2
µA
ICC1
Standby current
S = VCC, VIN = VSS or VCC
100
µA
ICC2
Deep Power-down current
S = VCC, VIN = VSS or VCC
50
µA
ICC3
Operating current (READ)
C = 0.1VCC / 0.9.VCC at 25 MHz,
Q = open
8mA
C = 0.1VCC / 0.9.VCC at 20 MHz,
Q = open
4mA
ICC4
Operating current (PP)
S = VCC
15
mA
ICC5
Operating current (WRSR)
S = VCC
15
mA
ICC6
Operating current (SE)
S = VCC
15
mA
ICC7
Operating current (BE)
S = VCC
15
mA
VIL
Input Low voltage
–0.5
0.3VCC
V
VIH
Input High voltage
0.7VCC
VCC+0.4
V
VOL
Output Low voltage
IOL = 1.6 mA
0.4
V
VOH
Output High voltage
IOH = –100 μAVCC–0.2
V
Table 16.
Instruction times (device grade 6)
Test conditions specified in Table 10 and Table 12
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
tW
Write Status Register cycle time
5
15
ms
tPP
(1)
1.
When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1
≤n ≤
256).
Page Program cycle time (256 bytes)
1.4
5ms
Page Program cycle time (n bytes)
0.4+
n*1/256(2)
2.
tPP=2μs+8μs*[int(n-1)/2+1]+4μs*[int(n-1)/2]+2μs, in products with process technology code X and Y.
tSE
Sector Erase cycle time
0.65
3
s
tBE
Bulk Erase cycle time
1.7
6
s



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