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AT45DB641E 데이터시트(PDF) 60 Page - Renesas Technology Corp

부품명 AT45DB641E
상세설명  64-Mbit DataFlash (with Extra 2-Mbits), 1.7 V Minimum SPI Serial Flash Memory
PDF  78 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB641E 데이터시트(HTML) 60 Page - Renesas Technology Corp

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DS-AT45DB641E-027 Rev. O
Page 60
6/30/23
© 2023 Renesas Electronics
AT45DB641E Datasheet
19.4 AC Characteristics
1. Values are based on device characterization, not 100% tested in production.
Symbol
Parameter
1.7 V to 3.6 V
2.3 V to 3.6 V
Units
Min
Max
Min
Max
fSCK
SCK Frequency
50
85
MHz
fCAR1
SCK Frequency for Continuous Read (0x0B)
50
85
MHz
fCAR2
SCK Frequency for Continuous Read (Low Frequency)(0x03)
40
50
MHz
fCAR3
SCK Frequency for Continuous Read (Low Power Mode – 01h Opcode)
15
15
MHz
fCAR4
SCK Frequency for Continuous Read (0x1B)
66
104
MHz
tWH
SCK High Time
4.5
4.5
ns
tWL
SCK Low Time
4.5
4.5
ns
tSCKR[1]
SCK Rise Time, Peak-to-peak
0.1
0.1
V/ns
tSCKF[1]
SCK Fall Time, Peak-to-peak
0.1
0.1
V/ns
tCS
Minimum CS High Time
30
30
ns
tCSS
CS Setup Time
6
5
ns
tCSH
CS Hold Time
5
5
ns
tSU
Data In Setup Time
2
2
ns
tH
Data In Hold Time
1
1
ns
tHO
Output Hold Time
0
0
ns
tDIS[1]
Output Disable Time
8
6
ns
tV
Output Valid
76
ns
tWPE
WP Low to Protection Enabled
1
1
µs
tWPD
WP High to Protection Disabled
1
1
µs
tLOCK
Freeze Sector Lockdown Time (from CS High)
200
200
µs
tEUDPD[1] CS High to Ultra-Deep Power-Down
3
3
µs
tCSLU
Minimum CS Low Time to Exit Ultra-Deep Power-Down
20
20
ns
tXUDPD
Exit Ultra-Deep Power-Down Time
100
100
µs
tEDPD[1]
CS High to Deep Power-Down
2
2
µs
tRDPD
Resume from Deep Power-Down Time
35
35
µs
tXFR
Page to Buffer Transfer Time
180
180
µs
tCOMP
Page to Buffer Compare Time
180
180
µs
tRST
RESET Pulse Width
10
10
µs
tREC
RESET Recovery Time
1
1
µs
tSWRST
Software Reset Time
35
35
µs



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