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AT45DB641E 데이터시트(PDF) 10 Page - Renesas Technology Corp

부품명 AT45DB641E
상세설명  64-Mbit DataFlash (with Extra 2-Mbits), 1.7 V Minimum SPI Serial Flash Memory
PDF  78 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB641E 데이터시트(HTML) 10 Page - Renesas Technology Corp

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DS-AT45DB641E-027 Rev. O
Page 10
6/30/23
© 2023 Renesas Electronics
AT45DB641E Datasheet
4.
Memory Array
To provide optimal flexibility, the AT45DB641E memory array is divided into three levels, comprising sectors,
blocks, and pages. Figure 3 shows each level and details the number of pages per sector and block. Program
operations to the DataFlash can be done at the full page level or at the byte level (a variable number of bytes).
The erase operations can be performed at the chip, sector, block, or page level.
Figure 3. Memory Architecture Diagram
Sector 0a = 8 pages
2,048/2,112 bytes
Sector 0b = 1,016 pages
260,096/268,224 bytes
Block = 2,048 / 2,112 bytes
8 Pages
Sector 0a
Page = 256 / 264 bytes
Page 0
Page 1
Page 6
Page 7
Page 8
Page 9
Page 32,766
Page 32,767
Page 14
Page 15
Page 16
Page 17
Page 18
Sector Architecture
Block Architecture
Page Architecture
Block 0
Block 1
Block 126
Block 127
Block 128
Block 129
Block 4,094
Block 4,095
Block 254
Block 255
Block 256
Block 257
Sector 31 = 1,024 pages
262,144/270,366 bytes
Block 2
Sector 1 = 1,024 pages
262,144/270,336 bytes
Sector 30 = 1,024 pages
262,144/270,336 bytes
Sector 2 = 1,024 pages
262,144/270,336 bytes



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