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AP30G06GD 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

부품명 AP30G06GD
상세설명  60V NP-Channel Enhancement Mode MOSFET
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AP30G06GD
60V N+P-Channel Enhancement Mode MOSFET
AP30G06GD REV1.0
永源微電子科技有限公司
Description
The AP30G06GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery
protection or in other Switching application.
General Features
VDS = 60V ID =36A
RDS(ON) < 32mΩ @ VGS=10V（Type：25mΩ）
VDS = -60V ID =-29A
RDS(ON) < 58mΩ @ VGS=-10V（Type：46mΩ）
Application
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP30G06GD
TO-252-4L
AP30G06GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
60
-60
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25
℃
Continuous Drain Current, VGS @ 10V1
36
-29
A
ID@TA=70
℃
Continuous Drain Current, VGS @ 10V1
15.8
-15.3
A
IDM
Pulsed Drain Current2
105
-95
A
EAS
Single Pulse Avalanche Energy3
125.5
135.3
mJ
IAS
Avalanche Current
22.6
-26.6
A
PD@TA=25
℃
Total Power Dissipation4
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
3.6
℃
/W


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