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AP30G06GD 데이터시트(PDF) 3 Page - A POWER MICROELECTRONICS

부품명 AP30G06GD
상세설명  60V NP-Channel Enhancement Mode MOSFET
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AP30G06GD
60V N+P-Channel Enhancement Mode MOSFET
AP30G06GD REV1.0
永源微電子科技有限公司
P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
-70
---
V
△BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25
℃ , ID=-1mA
---
-0.03
---
V/
℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V , ID=-3A
---
48
58
mΩ
VGS=-4.5V , ID=-2A
---
64
80
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.6
-2.5
V
△VGS(th)
VGS(th) Temperature Coefficient
---
4.56
---
mV/
℃
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=25
℃
---
---
1
uA
VDS=-48V , VGS=0V , TJ=55
℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
15
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13.5
---
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-48V , VGS=-4.5V , ID=-3A
---
9.86
---
nC
Qgs
Gate-Source Charge
---
3.1
---
Qgd
Gate-Drain Charge
---
2.95
---
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-10V ,
RG=3.3 ,
ID=-1A
---
28.8
---
ns
Tr
Rise Time
---
19.8
---
Td(off)
Turn-Off Delay Time
---
60.8
---
Tf
Fall Time
---
7.2
---
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
1447
---
pF
Coss
Output Capacitance
---
97.3
---
Crss
Reverse Transfer Capacitance
---
70
---
IS
Continuous Source Current1,5
VG=VD=0V , Force Current
---
---
-3.7
A
ISM
Pulsed Source Current2,5
---
---
-7.5
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25
℃
---
---
-1.2
V
Note :
1
、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2
、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3
、The power dissipation is limited by 150℃ junction temperature
4
、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.



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