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AP30G06GD 데이터시트(PDF) 3 Page - A POWER MICROELECTRONICS |
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AP30G06GD 데이터시트(HTML) 3 Page - A POWER MICROELECTRONICS |
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3 / 10 page ![]() AP30G06GD 60V N+P-Channel Enhancement Mode MOSFET AP30G06GD REV1.0 永源微電子科技有限公司 P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 -70 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.03 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-3A --- 48 58 mΩ VGS=-4.5V , ID=-2A --- 64 80 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.56 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25 ℃ --- --- 1 uA VDS=-48V , VGS=0V , TJ=55 ℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13.5 --- Ω Qg Total Gate Charge (-4.5V) VDS=-48V , VGS=-4.5V , ID=-3A --- 9.86 --- nC Qgs Gate-Source Charge --- 3.1 --- Qgd Gate-Drain Charge --- 2.95 --- Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A --- 28.8 --- ns Tr Rise Time --- 19.8 --- Td(off) Turn-Off Delay Time --- 60.8 --- Tf Fall Time --- 7.2 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1447 --- pF Coss Output Capacitance --- 97.3 --- Crss Reverse Transfer Capacitance --- 70 --- IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -3.7 A ISM Pulsed Source Current2,5 --- --- -7.5 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 ℃ --- --- -1.2 V Note : 1 、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2 、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3 、The power dissipation is limited by 150℃ junction temperature 4 、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. |
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