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PRELIMINARY DATA

July 1999

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M29F512B

512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory

s

SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

s

ACCESS TIME: 45ns

s

PROGRAMMING TIME

– 8µs per Byte typical

s

PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Chip Erase algorithm

– Status Register Polling and Toggle Bits

s

UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

s

LOW POWER CONSUMPTION

– Standby and Automatic Standby

s

100,000 PROGRAM/ERASE CYCLES

s

20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 24h

TSOP32 (NZ)

8 x 14mm

PLCC32 (K)

Figure 1. Logic Diagram

AI02739

16

A0-A15

W

DQ0-DQ7

VCC

M29F512B

E

VSS

8

G