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M36W108AT 데이터시트(PDF) 17 Page - STMicroelectronics

부품명 M36W108AT
상세설명  8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
PDF  36 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M36W108AT 데이터시트(HTML) 17 Page - STMicroelectronics

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M36W108AT, M36W108AB
Table 18. Flash Read AC Characteristics
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of EF without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program Mode.
4. See Flash-SRAM Switching Waveforms.
Symbol
Alt
Parameter
Test Condition
Flash Memory Chip
Unit
100
120
CL = 30pF
CL = 100pF
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next Address Valid
EF = VIL, G = VIL
100
120
ns
tAVQV
tACC
Address Valid to Output Valid
EF = VIL, G = VIL
100
120
ns
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
00
ns
tELQV
(2)
tCE
Chip Enable Low to Output Valid
G = VIL
100
120
ns
tGLQX
(1)
tOLZ
Output Enabled Low to Output
Transition
EF = VIL
00
ns
tGLQV
(2)
tOE
Output Enable Low to Output Valid
EF = VIL
40
50
ns
tEHQX
tOH
Chip Enable High to Output Transition
G = VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
30
30
ns
tGHQX
tOH
Output Enable High to Output
Transition
EF = VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to Output Hi-Z
EF = VIL
30
30
ns
tAXQX
tOH
Address Transition to Output Transition
EF = VIL, G = VIL
00
ns
tPLYH
(1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
µs
tPHEL
tRH
RP High to Chip Enable Low
50
50
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tCCR
(4)
Chip Enabled Recovery Time
0
0
ns



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