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M36W108AT 데이터시트(PDF) 21 Page - STMicroelectronics

부품명 M36W108AT
상세설명  8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
PDF  36 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36W108AT 데이터시트(HTML) 21 Page - STMicroelectronics

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M36W108AT, M36W108AB
Table 20. Flash Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V)
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Symbol
Alt
Parameter
Flash Memory Chip
Unit
100
120
CL = 30pF
CL = 100pF
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
100
120
ns
tWLEL
tWS
Write Enable Low to Chip Enable Low
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
50
50
ns
tDVEH
tDS
Input Valid to Chip Enable High
50
50
ns
tEHDX
tDH
Chip Enable High to Input Transition
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
30
20
ns
tAVEL
tAS
Address Valid to Chip Enable Low
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
50
50
ns
tGHEL
Output Enable High Chip Enable Low
0
0
ns
tVCHWL
tVCS
VCC High to Write Enable Low
50
50
µs
tEHGL
tOEH
Chip Enable High to Output Enable Low
0
0
ns
tPHPHH
(1,2)
tVIDR
RP Rise Time to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tEHRL
(1)
tBUSY
Program Erase Valid to RB Delay
90
90
ns
tPHWL
(1)
tRSP
RP High to Write Enable Low
4
4
µs



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