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M36W108 데이터시트(PDF) 13 Page - STMicroelectronics |
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M36W108 데이터시트(HTML) 13 Page - STMicroelectronics |
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13 / 35 page ![]() 13/35 M36W108T, M36W108B Table 12. Flash Program/Erase Times and Endurance (TA = 0 to 70 °C; VCC = 2.7 V to 3.6 V) Parameter Flash Memory Chip Unit Min Typ Typical after 100k W/E Cycles Max Chip Erase (Preprogrammed) 5 3.3 sec Chip Erase 12 sec Boot Block Erase 2.4 sec Parameter Block Erase 2.3 sec Main Block (32Kb) Erase 2.7 sec Main Block (64Kb) Erase 3.3 15 sec Chip Program (Byte) 8 8 sec Byte Program 10 10 µs Program/Erase Cycles (per Block) 100,000 cycles |
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