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M36W108 데이터시트(PDF) 18 Page - STMicroelectronics

부품명 M36W108
상세설명  8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
PDF  35 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36W108 데이터시트(HTML) 18 Page - STMicroelectronics

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M36W108T, M36W108B
18/35
Table 18. Flash Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V)
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Symbol
Alt
Parameter
Flash Memory Chip
Unit
100
120
CL = 30pF
CL = 100pF
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
100
120
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
50
50
ns
tDVWH
tDS
Input Valid to Write Enable High
50
50
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
30
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
50
50
ns
tGHWL
Output Enable High to Write Enable Low
0
0
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
50
50
µs
tWHGL
tOEH
Write Enable High to Output Enable Low
0
0
ns
tPHPHH
(1,2)
tVIDR
RP Rise Time to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tWHRL
(1)
tBUSY
Program Erase Valid to RB Delay
90
90
ns
tPHWL
(1)
tRSP
RP High to Write Enable Low
4
4
µs



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