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STM32F103XC 데이터시트(PDF) 83 Page - STMicroelectronics

부품명 STM32F103XC
상세설명  Performance line, ARM-based 32-bit MCU with up to 512 KB Flash, USB, CAN, 11 timers, 3 ADCs and 13 communication interfaces
PDF  118 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F103XC 데이터시트(HTML) 83 Page - STMicroelectronics

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STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
83/118
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J
1752/3 standard which specifies the test board and the pin loading.
5.3.12
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 41.
EMI characteristics(1)
1.
TBD = to be determined.
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz 8/72 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 25 °C,
LQFP100 package
compliant with SAE J
1752/3
0.1 to 30 MHz
TBD
TBD
dBµV
30 to 130 MHz
TBD
TBD
130 MHz to 1GHz
TBD
TBD
SAE EMI Level
TBD
TBD
-
Table 42.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum value(1)
1.
Values based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C
conforming to
JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C
conforming to
JESD22-C101
II
500



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