AS1130-BSST datasheet(8/67 Pages) AMSOSRAM

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ams Datasheet

Page 7

[v2-01] 2016-Oct-12

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AS1130 − Electrical Characteristics

VDD = 2.7V to 5.5V, typ. values are at TAMB = 25ºC (unless otherwise

specified). All limits are guaranteed. The parameters with min

and max values are guaranteed with production tests or SQC

(Statistical Quality Control) methods.

Figure 7:

Electrical Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TAMB

Operating Temperature Range

-40

°C

Operating Junction

Temperature Range

-40

125

°C

VDD

Operating Supply Voltage

2.7

5.5

IDD

Operating Supply Current

All current sources

turned ON, @ VDD = 5.5V

340

All current sources

turned OFF, @ VDD = 5.5V

0.5

IDDSSD

Software Shutdown Supply

Current

All digital inputs at VDD or

GND @ VDD = 5.5V

715

μA

IDDFSD

Full Shutdown Supply Current

Pin RSTN = 0V,

TAMB = 25ºC

0.1

μA

IDIGIT

Digit Drive Sink Current

(drive capability of all sources

of one digit(1))

360

ISEG

Segment Drive Source Current

LED(2)

VOUT = 1.8V to

VDD-400mV

ΔISEG

Segment Drive Current

Matching LED

Device to Device Current

Matching LED

VOUT = 1.8V, VDD = 3.3V

ILEAK

Leakage Output Current

All current sources OFF,

VOUT = 0V, VDD = 5.5V,

TAMB = 25ºC

0.005

0.5

μA

ΔILNR

Line Regulation

VOUT = 1.8V

0.25

%/V

ΔILDR

Load Regulation

VOUT = 1.8V to

VDD-400mV

0.25

%/V

VDSSAT

Saturation Voltage

Current = 30mA,

VDD = 3.3V

200

RDSON(N)

Resistance for NMOS

0.3

Electrical Characteristics

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