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R7KA8M2AFDCAM 데이터시트(PDF) 146 Page - Renesas Technology Corp |
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R7KA8M2AFDCAM 데이터시트(HTML) 146 Page - Renesas Technology Corp |
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146 / 295 page ![]() A16 to A00 (RFS) SDCLK SDCS AP*1 DQMn DQ31 to DQ00 RAS CAS WE CKE (Hi-Z) tCKED (High) tCASD tCASD tCASD tRASD tRASD tRASD t CSD2 t CSD2 t CSD2 t AD2 t AD2 (RFA) Ts (RFX) (RFA) t AD2 t AD2 t CSD2 t CSD2 t CSD2 t CSD2 tRASD tRASD tRASD tRASD tCASD tCASD tCASD tCASD tCKED SDRAM command t DQMD t DQMD Figure 2.51 SDRAM self-refresh timing 2.3.7 I/O Ports, POEG, GPT, AGT, ULPT and ADC Trigger Timing Table 2.57 I/O ports, POEG, GPT, AGT, ULPT and ADC trigger timing (1 of 4) GPT32 Conditions: Middle drive output is selected in the Port Drive Capability bit in the PmnPFS register. If GPT pins are specified across the VCC I/O and VCC2 I/O, characteristics below is guaranteed only when VCC = VCC2. AGT Conditions: Middle drive output is selected in the Port Drive Capability bit in the PmnPFS register. Parameter Symbol Min Max Unit Test conditions I/O ports Input data pulse width tPRW 5.5 — tIcyc Figure 2.52 EXCIN input frequency tEXCIN — 36 kHz RTCICn (n = 0 to 2) input pulse width tRTCICW 13.89 — μs Figure 2.53 RA8M2 Datasheet 2. Electrical Characteristics R01DS0438EJ0130 Rev.1.30 Feb 27, 2026 Page 146 of 295 |
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