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R7KA8M2AFDCAM 데이터시트(PDF) 269 Page - Renesas Technology Corp

부품명 R7KA8M2AFDCAM
상세설명  Renesas Microcontrollers
PDF  295 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
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2.15.6
Zeroizing of W-HUK
Table 2.121
Zeroizing of W-HUK Characteristics
Parameter
MRPCLK = 125
MHz
MRPCLK = 100
MHz
MRPCLK = 75
MHz
MRPCLK = 66
MHz
Min
Typ Max Min
Typ Max Min
Typ Max Min
Typ Max
Acton time of Zeroing of
W-HUK*1
tZW
H
—
—
793 —
—
793 —
—
793 —
—
793 ms
—
Note 1. To calculate the updating time at other frequencies, using approximate formula below listed. (FMRPCLK: frequency of MRPCLK
[MHz])
tZWH (Max) = 34.52/FMRPCLK + 799 [µs]
2.15.7
MRAM Magnetic Field Immunity Characteristics
Table 2.122
MRAM Magnetic field Immunity Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Operation
Write state
Gmax_wr
—
—
200
Gauss
—
Read state
Gmax_rd
—
—
200
Gauss
—
No access state
Gmax_noac
—
—
500
Gauss
—
Storage
Gmax_stg
—
—
500
Gauss
The applied temperature is
Tstg.
2.16
Boundary Scan
Table 2.123
Boundary scan characteristics (1 of 2)
Parameter
VCC
Symbol
Min
Typ
Max
Unit
Test conditions
TCK clock cycle time
1.62 V or
above
tTCKcyc
100
—
—
ns
Figure 2.149
TCK clock high pulse width
1.62 V or
above
tTCKH
0.45
—
—
tTCKcyc
TCK clock low pulse width
1.62 V or
above
tTCKL
0.45
—
—
tTCKcyc
TCK clock rise time
1.62 V or
above
tTCKr
—
—
0.05*2
tTCKcyc
TCK clock fall time
1.62 V or
above
tTCKf
—
—
0.05*2
tTCKcyc
TMS setup time
1.62 V or
above
tTMSS
20
—
—
ns
Figure 2.150
TMS hold time
1.62 V or
above
tTMSH
20
—
—
ns
TDI setup time
1.62 V or
above
tTDIS
20
—
—
ns
TDI hold time
1.62 V or
above
tTDIH
20
—
—
ns
TDO data delay
1.62 V or
above
tTDOD
—
—
40
ns
RA8M2 Datasheet
2. Electrical Characteristics
R01DS0438EJ0130 Rev.1.30
Feb 27, 2026
Page 269 of 295



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