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R7KA8M2JFECAB 데이터시트(PDF) 76 Page - Renesas Technology Corp |
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R7KA8M2JFECAB 데이터시트(HTML) 76 Page - Renesas Technology Corp |
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76 / 295 page ![]() Table 2.32 Current increase during BGO operation (Programing of MRAM OTP) (DCDC mode and External VDD mode) Parameter Symbol Typ Max Unit Test conditions 95 °C 105 °C 125 °C Supply current*1 normal speed write mode ICC — — — 20 mA VCC ≥ 1.62V IDD — — — 0.50 high speed write mode 0 ICC — — — 25 VCC ≥ 2.5V IDD — — — 0.5 high speed write mode 1 ICC — — — 80 VCC ≥ 3.0V IDD — — — 0.5 Note 1. Supply current values are with all output pins unloaded and all input pull-up MOSs in the off state. RA8M2 Datasheet 2. Electrical Characteristics R01DS0438EJ0130 Rev.1.30 Feb 27, 2026 Page 76 of 295 |
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