2N2484UB datasheet(9/19 Pages) STMICROELECTRONICS

9 / 19 page

MIL-PRF-19500/376E

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table

Measurement

of MIL-PRF-

19500)

JANS level

JANTX and JANTXV levels

Thermal impedance (see 4.3.2)

ICBO2, hFE4

Not applicable

48 hours minimum

ICBO2; hFE4;

∆ICBO2 = 100% of initial value or 2 nA dc,

whichever is greater.

∆hFE4 = ±15%

ICBO2 ,hFE4

See 4.3.1

240 hours minimum

See 4.3.1

80 hours minimum

Subgroups 2 and 3 of table I herein;

∆ICBO2 = 100% of initial value or 2 nA dc,

whichever is greater;

∆hFE4 = ±15%

Subgroup 2 of table I herein;

∆ICBO2 = 100% of initial value or 2 nA

dc, whichever is greater;

∆hFE4 = ±25%

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 to 30 V dc:

Power shall be applied to achieve TJ = 135

°C minimum and a minimum power dissipation = 75 percent of

maximum rated PT (see 1.3). TA = room ambient as defined in 4.5 of MIL-STD-750.

NOTE: No heat sink or forced air cooling on the devices shall be permitted.

4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance

with method 3131 of MIL-STD-750.

a. IM measurement current -------------5 mA.

b. IH forward heating current -----------50 mA (min).

c. tH heating time -------------------------25 - 30 ms.

d. tmd measurement delay time ------60

µs max.

e. VCE collector-emitter voltage ------10 V dc minimum.

The maximum limit for ZθJX under these test conditions are ZθJX (max) = 150°C/W for 2N2484, ZθJX (max) = 67°C/W

for 2N2484UA and 2N2484UB.

2N2484UB 데이터시트(PDF) 9 Page - STMicroelectronics

2N2484UB 데이터시트(HTML) 9 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

데이터시트 다운로드

링크 URL