MIL-PRF-19500/376E

31 August 2000

SUPERSEDING

MIL-PRF-19500/376D

21 August 1998

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.

Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of

product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and

UB), and figures 4 and 5 (die).

1.3 Maximum ratings.

Types

°C

mW

V dc

V dc

V dc

mA dc

°C

°C/W

°C/W

2N2484

500 (1)

60

6

60

50

-65 to +200

325

146

2N2484UA

650 (2)

60

6

60

50

-65 to +200

210

160

2N2484UB

500 (1)

60

6

60

50

-65 to +200

325

146

(1) Derate linearly at 3.08 mW/

(2) Derate linearly at 4.76 mW/

1.4 Primary electrical characteristics.

Limits

f = 1 kHz

100 kHz

≤ f ≤ 1 MHz

µA dc

f = 30 MHz

Min

Max

250

900

pF

5.0

2.0

7.0

V dc

0.3

(1) Pulsed (see 4.5.1).

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 31 November 2000.

INCH-POUND

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.