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STC03DE170HV 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STC03DE170HV
상세설명  Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.33 W
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STC03DE170HV 데이터시트(HTML) 3 Page - STMicroelectronics

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STC03DE170HV
Electrical characteristics
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Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS =VGS =0V)
VCS(SS) =1700V
100
µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10
µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
100
µA
IGS(OS)
Gate-source leakage
(VBS =0V)
VGS = ± 20V
500
nA
VCS(ON)
Collector-source ON
voltage
VGS =10V IC =3A IB =0.6A
VGS =10V IC =1A IB =100mA
1
0.3
1.2
0.6
V
V
hFE
DC current gain
VGS =10V VCS =1V IC =3A
VGS =10V VCS =1V IC =1A
10
5
14
VBS(ON)
Base-source ON
voltage
VGS =10V IC =3A IB =0.6A
VGS =10V IC =1A IB =100mA
1
1
1.2
V
V
VGS(th)
Gate threshold voltage
VBS =VGS IB =250µA
1.5
3
V
Ciss
Input capacitance
VCS =25V f =1MHz
VGS=0V
750
pF
QGS(tot)
Gate-source Charge
VCS=15V
VGS=10V
VCB=0V
IC =4A
12.5
nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1360V tp =4µs
IC =3A
IB =0.6A
1000
15
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1360V tp =4µs
IC =3A
IB =0.3A
590
15
ns
ns
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCC =VClamp =400V
VGS =10V
IC =1.5A
IB = 0.1A
RG =47Ω
tpeak =500ns
IBpeak =3A
9.5
V



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