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AT45DB021E 데이터시트(PDF) 48 Page - Renesas Technology Corp

부품명 AT45DB021E
상세설명  2-Mbit DataFlash (with Extra 64 kbits) 1.65 V Minimum SPI Serial Flash Memory
PDF  69 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB021E 데이터시트(HTML) 48 Page - Renesas Technology Corp

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DS-AT45DB021E-8789 Rev. N
Page 48
3/24/26
© 2012-2026 Renesas Electronics
AT45DB021E Datasheet
20.4 AC Characteristics
1. Values are based on device characterization, not 100% tested in production.
20.5 Program and Erase Characteristics
Symbol
Parameter
1.65 V to 3.6 V
2.3 V to 3.6 V
Units
Min
Typ
Max
Min
Typ
Max
fSCK
SCK Frequency
70
70
MHz
fCAR1
SCK Frequency for Continuous Read
70
85
MHz
fCAR2
SCK Frequency for Continuous Read
(Low Frequency)
33
33
MHz
fCAR3
SCK Frequency for Continuous Read
(Low Power Mode – 01h Opcode)
15
15
MHz
tWH
SCK High Time
4
4
ns
tWL
SCK Low Time
4
4
ns
tSCKR[1]
SCK Rise Time, Peak-to-peak
0.1
0.1
V/ns
tSCKF[1]
SCK Fall Time, Peak-to-peak
0.1
0.1
V/ns
tCS
Minimum CS High Time
20
20
ns
tCSS
CS Setup Time
6
5
ns
tCSH
CS Hold Time
5
5
ns
tSU
Data In Setup Time
2
2
ns
tH
Data In Hold Time
1
1
ns
tHO
Output Hold Time
0
0
ns
tDIS[1]
Output Disable Time
8
6
ns
tV
Output Valid
7
6
ns
tWPE
WP Low to Protection Enabled
1
1
µs
tWPD
WP High to Protection Disabled
1
1
µs
tLOCK
Freeze Sector Lockdown Time (from CS High)
200
200
µs
tEUDPD[1]
CS High to Ultra-Deep Power-Down
3
3
µs
tCSLU
Minimum CS Low Time to Exit Ultra-Deep Power-
Down
20
20
ns
tXUDPD
Exit Ultra-Deep Power-Down Time
240
120
µs
tEDPD[1]
CS High to Deep Power-Down
2
2
µs
tRDPD
Resume from Deep Power-Down Time
35
35
µs
tXFR
Page to Buffer Transfer Time
100
100
µs
tCOMP
Page to Buffer Compare Time
100
100
µs
tRST
RESET Pulse Width
10
10
µs
tREC
RESET Recovery Time
1
1
µs
tSWRST
Software Reset Time
35
35
µs
Symbol
Parameter
Typ
Max
Typ
Max
Units
tEP
Page Erase and Programming Time (256/264 bytes)
10
35
10
25
ms
tP
Page Programming Time
1.5
3
1.5
3
ms
tBP
Byte Programming Time
8
8
µs
tPE
Page Erase Time
6
25
6
25
ms
tBE
Block Erase Time
25
35
25
35
ms
tSE
Sector Erase Time
350
550
350
550
ms
tCE
Chip Erase Time
3
4
3
4
s
tOTPP
OTP Security Register Program Time
200
500
200
500
µs



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