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AT45DB021E 데이터시트(PDF) 10 Page - Renesas Technology Corp

부품명 AT45DB021E
상세설명  2-Mbit DataFlash (with Extra 64 kbits) 1.65 V Minimum SPI Serial Flash Memory
PDF  69 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB021E 데이터시트(HTML) 10 Page - Renesas Technology Corp

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DS-AT45DB021E-8789 Rev. N
Page 10
3/24/26
© 2012-2026 Renesas Electronics
AT45DB021E Datasheet
4.
Memory Array
To provide optimal flexibility, the AT45DB021E memory array is divided into three levels of granularity comprising
of sectors, blocks, and pages. Figure 3 illustrates the breakdown of each level and details the number of pages
per sector and block. Program operations to the DataFlash can be done at the full page level or at the byte level (a
variable number of bytes). The erase operations can be performed at the chip, sector, block, or page level.
Figure 3. Memory Architecture Diagram
Sector 0a = 8 pages
2,048/2,112 bytes
Sector 0b = 120 pages
30,720/31,680 bytes
Block = 2,048/2,112 bytes
8 Pages
Sector 0a
Page = 256/264 bytes
Page 0
Page 1
Page 6
Page 7
Page 8
Page 9
Page 1,022
Page 1,023
Page 14
Page 15
Page 16
Page 17
Page 18
Sector Architecture
Block Architecture
Page Architecture
Block 0
Block 1
Block 14
Block 15
Block 16
Block 17
Block 126
Block 127
Block 30
Block 31
Block 112
Block 113
Sector 7 = 128 pages
32,768/33,792 bytes
Block 2
Sector 1 = 128 pages
32,768/33,792 bytes
Sector 6 = 128 pages
32,768/33,792 bytes



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