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PD57002S 데이터시트(PDF) 1 Page - STMicroelectronics |
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PD57002S 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() 1/16 March, 7 2003 PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57002 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The PD57002 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (formed lead) ORDER CODE PD57002 BRANDING PD57002 PowerSO-10RF (straight lead) ORDER CODE PD57002S BRANDING PD57002S ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ± 20 V ID Drain Current 0.25 A PDISS Power Dissipation (@ Tc = 70°C) 4.75 W Tj Max. Operating Junction Temperature 165 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 20 °C/W Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) |
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