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PD57018STR-E 데이터시트(PDF) 6 Page - STMicroelectronics

부품명 PD57018STR-E
상세설명  RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
PDF  28 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD57018STR-E 데이터시트(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
PD57018-E, PD57018S-E
6/28
2
Electrical characteristics
TCASE = +25
oC
2.1
Static
2.2
Dynamic
Table 4.
Static
Symbol
Test conditions
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V
IDS = 10 mA
65
V
IDSS
VGS = 0 V
VDS = 28 V
1
µA
IGSS
VGS = 20 V
VDS = 0 V
1
µA
VGS(Q)
VDS = 28 V
ID = 100 mA
2.0
4.0
V
RDS(ON)
VGS = 10 V
ID = 1.25 A
0.76
Ω
gFS
VDS = 10 V
ID = 1 A
1
mho
CISS
VGS = 0 V
VDS = 28 V
f = 1 MHz
34.5
pF
COSS
VGS = 0 V
VDS = 28 V
f = 1 MHz
21
pF
CRSS
VGS = 0 V
VDS = 28 V
f = 1 MHz
1.3
pF
Table 5.
Dynamic
Symbol
Test conditions
Min
Typ
Max
Unit
POUT
VDD = 28 V, IDQ = 100 mA
f = 945 MHz
18
W
GPS
VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz
14
16.5
dB
hD
VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz
50
53
%
Load
mismatch
VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz
All phase angles
10:1
VSWR



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