74LVC1G86

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Product data sheet

Rev. 10 — 2 July 2012

6 of 19

NXP Semiconductors

74LVC1G86

2-input EXCLUSIVE-OR gate

[1]

All typical values are measured at VCC = 3.3 V and Tamb =25 C.

11. Dynamic characteristics

[1]

All typical values are measured at nominal VCC.

[2]

tpd is the same as tPLH and tPHL

[3]

CPD is used to determine the dynamic power dissipation (PD in W).

PD =CPD  VCC2  fi  N+ (CL  VCC2  fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(C

L  VCC

2

 f

o) = sum of the outputs.

IOFF

power-off

leakage current

VCC = 0 V; VI or VO =5.5 V

-

0.1

10

-

200

A

ICC

supply current

VI = 5.5 V or GND; IO = 0 A;

VCC = 1.65 V to 5.5 V

-

0.1

10

-

200

A

I

CC

additional

supply current

per pin; VCC = 2.3 V to 5.5 V;

VI =VCC  0.6 V; IO =0 A

-

5

500

-

5000

A

CI

input

capacitance

VCC =3.3 V; VI = GND to VCC

-5

-

-

-

pF

Table 7.

Static characteristics …continued

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

40 C to +85 C

40 C to +125 C

Unit

Min

Typ[1]

Max

Min

Max

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 9.

Symbol Parameter

Conditions

40 C to +85 C

40 C to +125 C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

A, B to Y; see Figure 8

[2]

VCC = 1.65 V to 1.95 V

1.0

3.7

9.9

1.0

13.0

ns

VCC = 2.3 V to 2.7 V

0.5

2.5

5.5

0.5

7.0

ns

VCC = 2.7 V

0.5

2.8

5.8

0.5

7.5

ns

VCC = 3.0 V to 3.6 V

0.5

2.3

5.0

0.5

6.5

ns

VCC = 4.5 V to 5.5 V

0.5

1.9

4.0

0.5

5.5

ns

CPD

power dissipation

capacitance

VI =GND to VCC

[3]

VCC = 3.3 V

-

25

-

-

-

pF