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STR730FZ1T7 데이터시트(PDF) 34 Page - STMicroelectronics |
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STR730FZ1T7 데이터시트(HTML) 34 Page - STMicroelectronics |
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34 / 52 page ![]() Electrical parameters STR73xFxx 34/52 4.3.3 Memory characteristics Flash memory 1. TA = -45° C after 0 cycles, Guaranteed by characterization, not tested in production. 2. All bits programmed to 0. 3. Guaranteed by design, not tested in production. Table 18. Flash memory characteristics Symbol Parameter Test Conditions Value Unit Min Typ Max1) tWP Word program (32-bit) 35 80 μs tDWP Double word program(64-bit) 64 150 μs tBP64 Bank program (64 K) Double word program 0.5 1.25 s tBP128 Bank program (128 K) Double word program 1 2.5 s tBP256 Bank program (256 K) Double word program 2 4.9 s tSE8 Sector erase (8 K) Not preprogrammed Preprogrammed 2) 0.6 0.5 0.9 0.8 s tSE32 Sector erase (32 K) Not preprogrammed Preprogrammed2) 1.1 0.8 2 1.8 s tSE64 Sector erase (64 K) Not preprogrammed preprogrammed 2) 1.7 1.3 3.7 3.3 s tRPD 3) Recovery from power-down 20 μs tPSL 3) Program suspend latency 10 μs tESL 3) Erase suspend latency 30 μs tESR 3) Erase suspend rate Min. time from erase resume to next erase suspend 20 20 ms tSP 3) Set protection 40 170 µs tFPW 3) First word program 1 ms NEND Endurance 10 kcycles tRET Data retention TA = 85° C 20 Years |
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