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L6591 데이터시트(PDF) 13 Page - STMicroelectronics |
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L6591 데이터시트(HTML) 13 Page - STMicroelectronics |
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13 / 32 page ![]() L6591 Application information 13/32 5.1 High-voltage start-up generator Figure 5 shows the internal schematic of the high-voltage start-up generator (HV generator). It is made up of a high-voltage N-channel FET, whose gate is biased by a 15 MW resistor, with a temperature-compensated current generator connected to its source. With reference to the timing diagram of Figure 6, when power is first applied to the converter the voltage on the bulk capacitor (Vin) builds up and, as it reaches about 80 V, the HV generator is enabled to operate (HV_EN is pulled high) and draws about 1 mA. This current, diminished by the IC consumption, charges the bypass capacitor connected between pin Vcc (9) and ground and makes its voltage rise almost linearly. As the Vcc voltage reaches the start-up threshold (13.5 V typ.) the IC starts operating and the HV generator is cut off by the Vcc_OK signal asserted high. The IC is powered by the energy stored in the Vcc capacitor until the self-supply circuit develops a voltage high enough to sustain the operation. The residual consumption of this circuit is just the one on the 15 MW resistor ( ≈10 mW at 400 Vdc), typically 50-70 times lower, under the same conditions, as compared to a standard start-up circuit made with an external dropping resistor. Figure 5. High-voltage start-up generator: internal schematic L6591 15 M & GN D HVSTART Vcc 9 11 16 Icharge Vcc_OK I HV CONTROL HV_EN Ω |
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