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EM640FP8 데이터시트(PDF) 4 Page - Emerging Memory & Logic Solutions Inc

부품명 EM640FP8
상세설명  512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
PDF  11 Pages
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제조업체  EMLSI [Emerging Memory & Logic Solutions Inc]
홈페이지  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM640FP8 데이터시트(HTML) 4 Page - Emerging Memory & Logic Solutions Inc

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EM640FP8 Series
Low Power, 512Kx8 SRAM
4
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCC
-1
-
1
µA
Output leakage current
ILO
CS1=VIH, CS2=V IL or OE=V IH or WE=V IL, V IO=VSS to VCC
-1
-
1
µA
Operating power supply
ICC
IIO=0mA, CS 1=VIL, CS 2= WE=VIH, VIN=V IH or V IL
-
-
2
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, I
IO =0mA,
CS 1<0.2V, CS2>V CC-0.2V,
VIN<0.2V or VIN>VCC-0.2V
-
-
2
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS 1=VIL, CS 2=V IH, VIN=VIL or VIH
70ns
-
-
12
mA
Output low voltage
VOL
IOL = 0.1mA
-
-
0.2
V
Output high voltage
VOH
IOH = -0.1mA
1.4
-
-
V
Standby Current (CMOS)
ISB1
CS1>VCC -0.2V, CS 2>VCC-0.2V (CS1 controlled)
or 0V< CS2<0.2V (CS 2 controlled),
Other inputs=0 ~ VCC
(Typ. condition : VCC=1.8V @ 25
oC)
(Max. condition : VCC =2.2V @ 85
oC)
LL
LF
-
1
5
µA
RECOMMENDED DC OPERATING CONDITIONS 1)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.65
1.8
2.2
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
1.4
-
VCC + 0.3
2)
V
Input low voltage
V
IL
-0.33)
-
0.4
V
CAPACITANCE1) (f =1MHz, TA=25
oC)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN=0V
-
8
pF
Input/Ouput capacitance
C
IO
V
IO =0V
-
10
pF



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