| 전자부품 데이터시트 검색엔진 |
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EM640FP8 데이터시트(PDF) 5 Page - Emerging Memory & Logic Solutions Inc |
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EM640FP8 데이터시트(HTML) 5 Page - Emerging Memory & Logic Solutions Inc |
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5 / 11 page ![]() EM640FP8 Series Low Power, 512Kx8 SRAM 5 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. Parameter Symbol 70ns Unit Min Max Read cycle time tRC 70 - ns Address access time tAA - 70 ns Chip select to output tco1, tco2 - 70 ns Output enable to valid output tOE - 35 ns Chip select to low-Z output tLZ1, tLZ2 10 - ns Output enable to low-Z output tOLZ 5 - ns Chip disable to high-Z output tHZ1, tHZ2 0 25 ns Output disable to high-Z output tOHZ 0 25 ns Output hold from address change tOH 10 - ns Parameter Symbol 70ns Unit Min Max Write cycle time tWC 70 - ns Chip select to end of write tCW1, tCW2 60 - ns Address setup time tAs 0 - ns Address valid to end of write tAW 60 - ns Write pulse width tWP 55 - ns Write recovery time tWR 0 - ns Write to ouput high-Z tWHZ 0 25 ns Data to write time overlap tDW 30 ns Data hold from write time tDH 0 - ns End write to output low-Z tOW 5 - ns READ CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40 oC to +85oC) WRITE CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40 oC to +85oC) AC OPERATING CONDITIONS Test Conditions (Test Load and Test Input/Output Reference) Input Pulse Level : 0.2V to VCC-0.2V Input Rise and Fall Time : 5ns Input and Output reference Voltage : 0.9V Output Load (See right) : CL = 100pF+ 1 TTL CL1) = 30pF + 1 TTL 1. Including scope and Jig capacitance 2. R1=3070Ω, R2=3150Ω 3. VTM=1.8V CL 1) VTM 3) R1 2) R2 2) |
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