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RMLD232UAW 데이터시트(PDF) 13 Page - Emerging Memory & Logic Solutions Inc

부품명 RMLD232UAW
상세설명  2M x 32 bit Low Power DDR SDRAM
PDF  50 Pages
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제조업체  EMLSI [Emerging Memory & Logic Solutions Inc]
홈페이지  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

RMLD232UAW 데이터시트(HTML) 13 Page - Emerging Memory & Logic Solutions Inc

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13
Rev 0.7
64Mb Low Power DDR SDRAM
Advanced
Burst Write Operation
The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising edge of the clock(CK). The
address inputs determine the starting column address. There is no write latency relative to DQS required for burst write cycle. The
first data of a burst write cycle must be applied on the DQ pins tDS(Data-in setup time) prior to data strobe edge enabled after
tDQSS from the rising edge of the clock(CK) that the write command is issued. The remaining data inputs must be supplied on each
subsequent falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any
additional data supplied to the DQ pins will be ignored.
1. The specific requirement is that DQS be valid(High or Low) on or before this CK edge.
The case shown(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus.
If a previous write was in progress, DQS could be High at this time, depending on tDQSS.
0
1
2
3
4
5
6
7
8
CK
CK
Command
NOP
NOP
*1
NOP
NOP
NOP
NOP
NOP
tWPRES*1
tDQSSmax
DQS
DQs
Figure.6 Burst write operation timing
< Burst Length=4 >
WRITEA
WRITEB
Din 0 Din 1 Din 2 Din 3 Din 0
Din 2
Din 1
Din 3
*1



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