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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RMLD232UAW 데이터시트(PDF) 33 Page - Emerging Memory & Logic Solutions Inc |
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RMLD232UAW 데이터시트(HTML) 33 Page - Emerging Memory & Logic Solutions Inc |
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33 / 50 page  33 Rev 0.7 64Mb Low Power DDR SDRAM Advanced AC Timing Parameters & Specification Parameter Symbol DDR266 DDR222 Unit Note Min Max Min Max Clock cycle time CL=2 tCK 12.0 15.0 CL=3 7.5 9 Row cycle time tRC 67.5 81 Row active time tRAS 45 70,000 54 70,000 RAS to CAS delay tRCD 22.5 27 Row precharge time tRP 22.5 27 Row active to Row active delay tRRD 15 15 Write recovery time tWR 15 15 Last data in to Active delay tDAL 2*tCK+tRP 2*tCK+tRP - 2 Last data in to Read command tCDLR 1 1 tCK Col. address to Col. address dealy tCCD 1 1 tCK Clock high level width tCH 0.45 0.55 0.45 0.55 tCK Clock low level width tCL 0.45 0.55 0.45 0.55 tCK Output data access time from CK/CK CL=2 tAC 2.0 8.0 2.5 8.0 3 CL=3 2.0 6.0 2.5 6.0 DQS output data access time from CK/CK CL=2 tDQSCK 2.0 8.0 2.5 8.0 CL=3 2.0 6.0 2.5 6.0 Data storbe edge to output data edge tDQSQ 0.6 0.7 DQS Read Preamble CL=2 tRPRE 0.5 1.1 0.5 1.1 tCK CL=3 0.9 1.1 0.9 1.1 DQS Read Postamble tRPST 0.4 0.6 0.4 0.6 tCK CK to valid DQS-in tDQSS 0.75 1.25 0.75 1.25 tCK DQS-in write preamble setup time tWPRES 0 0 4 DQS-in write preamble hold time tWPREH 0.25 0.25 tCK DQS-in write postamble time tWPST 0.4 0.6 0.4 0.6 tCK DQS-in write preamble time tWPRE 0.25 0.25 tCK DQS-in high level width tDQSH 0.4 0.6 0.4 0.6 tCK DQS-in low level width tDQSL 0.4 0.6 0.4 0.6 tCK DQS falling edge to CK set-up time tDSS 0.2 0.2 tCK DQS falling edge hold time from CK tDSH 0.2 0.2 tCK DQS-in cycle time tDSC 0.9 1.1 0.9 1.1 tCK Address and Control Input setup time tIS 1.3 1.5 1 Address and Control Input hold time tIH 1.3 1.5 1 Address and Control input pulse width tIPW 2.6 3.0 1 DQ & DM setup time to DQS tDS 0.8 1.1 5,6 DQ & DM hold time to DQS tDH 0.8 1.1 5,6 DQ & DM input pulse width tDIPW 1.8 2.4 DQ and DQS low-impedence time from CK/CK tLZ 1.0 1.0 |
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