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RT3XAAM 데이터시트(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3XAAM 데이터시트(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page ![]() RT3XAAM Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION RT3XAAM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor ( R1=4.7 KΩ) ●Mini package for easy mounting APPLICATION muting circuit、switching circuit OUTLINE DRAWING Unit:mm MARKING . A XA 1 2 3 6 5 4 . . A XA 1 2 3 6 5 4 . MAXIMUM RATINGS (Ta=25℃)(RTr1、RTr2) Symbol Parameter Ratings Unit V CBO Collector to Base voltage 40 V V EBO Emitter to Base voltage 40 V V CEO Collector to Emitter voltage 20 V I C Collector current 400 mA P C Collector dissipation(Total Ta=25℃) 150 mW T j Junction temperature +150 ℃ T stg Storage temperature -55~+150 ℃ ISAHAYA ELECTRONICS CORPORATION TERMINAL CONNECTOR ①: EMITTER1 ②: BASE1 ③: COLLECTOR2 ④: EMITTER2 ⑤: BASE2 ⑥ :COLLECTOR1 JEITA:SC-88 1.25 2.1 ① ② ③ ⑤ ④ ⑥ R1 RTr1 ① ② ④ ⑤ R2 RTr2 ③ R1 ⑥ |
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