| 전자부품 데이터시트 검색엔진 |
|
RT3XAAM 데이터시트(PDF) 2 Page - Isahaya Electronics Corporation |
|
|
|||||||||||||||||||||||||||||
RT3XAAM 데이터시트(HTML) 2 Page - Isahaya Electronics Corporation |
|
2 / 4 page ![]() RT3XAAM Composite Transistor For Muting Application Silicon NPN Epitaxial Type TYPICAL CHARACTERISTICS (Tr1、Tr2) Electrical characteristics(Ta=25℃) Limits Symbol Parameter Test conditions Min Typ Max Unit V CBO Collector-base breakdown voltage IC=50μA , IE=0mA 40 V VEBO Emitter-base breakdown voltage IE=50μA , C=0mA 40 V VCEO Collector-emitter breakdown voltage IC=1mA , RBE=∞ 20 V ICBO Collector cutoff current VCB=40V , IE=0mA 0.5 μA IEBO Emitter cutoff current V EB=40V , IC=0mA 0.5 μA hFE DC current transfer ratio VCE=5V , IC=-10mA 820 2500 - VCE(sat) Collector-emitter saturation voltage IC=10mA , IB=0.5mA 10 mV R1 Input resistance - 3.29 4.7 6.11 KΩ fT Transition frequency V CE=10V, I E=-10mA, f=100MHz 38 MHz Ron Output On-resistance V I=5V, f=1MHz 0.80 Ω ISAHAYA ELECTRONICS CORPORATION Input on voltage - collector current 0.1 1 10 100 0.1 1 10 100 1000 collector current IC (mA) Ta=25℃ VCE=0.2V collector current - Input on voltage 10 100 1000 0 0.2 0.4 0.6 0.8 1 Input off voltage VI(OFF) (V) Ta=25℃ VCE=5V |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |