2STA2510 datasheet(3/7 Pages) STMICROELECTRONICS

부품명	2STA2510

상세설명	High power PNP epitaxial planar bipolar transistor

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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2STA2510

Electrical characteristics

3/7

Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 4.

Electrical characteristics

Pulsed duration = 300 µs, duty cycle

≤ 1.5%

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -100 V

-10

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -6 V

-10

µA

V(BR)CEO

(1)

Collector-emitter breakdown

voltage (IB = 0)

IC = -50 mA

-100

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = -100 µA

-100

V(BR)EBO

(1)

Emitter-base breakdown

voltage (IC = 0)

IE = -1 mA

-6

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = -12 A

IB = -1.2 A

-1.5

VBE

(1)

Base-emitter voltage

VCE = -4 V

IB = -12 A

-1.8

hFE

DC current gain

IC = -12 A

VCE = -4 V

Transition frequency

IC = -0.5 A

VCE = -12 V

MHz

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