BV42 datasheet(1/5 Pages) STMICROELECTRONICS

부품명	BV42

상세설명	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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STBV42

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

MEDIUM VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

APPLICATIONS:

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The STBV42 is designed for use in compact

fluorescent lamp application.

®

INTERNAL SCHEMATIC DIAGRAM

September 2001

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

700

V

VCEO

Collector-Emitter Voltage (IB = 0)

400

V

VEBO

Emitter-Base Voltage (IC = 0)

9

V

IC

Collector Current

1

A

ICM

Collector Peak Current (tp < 5 ms)

2

A

IB

Base Current

0.5

A

IBM

Base Peak Current (tp < 5 ms)

1

A

Ptot

Total Dissipation at Tamb = 25

oC1

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

TO-92

1/5

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BV42 데이터시트(PDF) 1 Page - STMicroelectronics

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