| 전자부품 데이터시트 검색엔진 |
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BV42 데이터시트(PDF) 2 Page - STMicroelectronics |
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BV42 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Max 120 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector Cut-off Current (VBE = -1.5V) VCE = 700 V VCE = 700 V Tj = 125 o 1 5 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 9 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 1 mA L = 25mH 400 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 0.25 A IB = 0.05 A IC = 0.5 A IB = 0.125 A IC = 0.75 A IB = 0.25 A 0.2 0.3 0.4 0.5 1 1.5 V V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 0.25 A IB = 0.05 A IC = 0.5 A IB = 0.125 A 1 1.2 V V hFE ∗ DC Current Gain IC = 0.4 A VCE = 5 V IC = 0.8 A VCE = 5 V 10 5 30 20 tf INDUCTIVE LOAD Fall Time IC = 0.25 A Vclamp = 300 V IB1 = -IB2 = 50 mA L = 3 mH 0.3 µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % Safe Operating Area Derating Curve STBV42 2/5 |
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