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STD17NF03L 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STD17NF03L
상세설명  N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET™ POWER MOSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD17NF03L 데이터시트(HTML) 1 Page - STMicroelectronics

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Aug 2000
STD17NF03L
N-CHANNEL 30V - 0.038
Ω - 17A - DPAK/IPAK
STripFET™ POWER MOSFET
(1) ISD ≤17A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V
s
TYPICAL RDS(on) = 0.038Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
APPLICATION ORIENTED CHARACTERIZATION
s
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
s
ADD SUFFIX “-1” FOR ORDERING IN IPAK
VERSION
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size
™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD17NF03L
30V
<0.05
Ω
17A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
±20
V
ID
Drain Current (continuos) at TC = 25°C
17
A
ID
Drain Current (continuos) at TC = 100°C
12
A
IDM (q)
Drain Current (pulsed)
68
A
PTOT
Total Dissipation at TC = 25°C
20
W
Derating Factor
0.13
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
EAS (2)
Single Pulse Avalanche Energy
200
mJ
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
IPAK
DPAK
3
2
1
1
3
INTERNAL SCHEMATIC DIAGRAM


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