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STD17NF03L 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STD17NF03L
상세설명  N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET™ POWER MOSFET
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD17NF03L 데이터시트(HTML) 3 Page - STMicroelectronics

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STD17NF03L
Thermal Impedence
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 15V, ID = 8.5A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
11
ns
tr
Rise Time
100
ns
Qg
Total Gate Charge
VDD = 24V, ID = 17A,
VGS = 10V
6.5
9
nC
Qgs
Gate-Source Charge
3.6
nC
Qgd
Gate-Drain Charge
2
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off-Delay Time
VDD = 15V, ID = 8.5A,
RG =4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
25
ns
tf
Fall Time
22
ns
tr(off)
Off-voltage Rise Time
Vclamp =24V, ID =17A
RG =4.7Ω, VGS = 4.5V
22
ns
tf
Fall Time
(see test circuit, Figure 5)
55
ns
tc
Cross-over Time
75
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
17
A
ISDM (1)
Source-drain Current (pulsed)
68
A
VSD (2)
Forward On Voltage
ISD = 17A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 17A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
30
ns
Qrr
Reverse Recovery Charge
18
nC
IRRM
Reverse Recovery Current
1.2
A
Safe Operating Area



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