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STGY50NB60HD 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STGY50NB60HD
상세설명  N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT
PDF  6 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGY50NB60HD 데이터시트(HTML) 1 Page - STMicroelectronics

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STGY50NB60HD
N-CHANNEL 50A - 600V MAX247
PowerMESH
™ IGBT
PRELIMINARY DATA
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (VCESAT)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
OFF LOSSES INCLUDE TAIL CURRENT
s
CO-PACKAGED WITH TURBOSWITCH
™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
WELDING EQUIPMENTS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Volt age (VGS = 0)
600
V
VGE
G ate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc =25
oC
100
A
IC
Collector Current (continuous) at Tc = 100
oC50
A
ICM(
•)
Collector Current (pulsed)
400
A
Ptot
T otal Dissipation at Tc =25
oC
250
W
Derating Fact or
2
W /
o C
Tstg
Storage T emperature
-65 t o 150
o C
Tj
Max. Operating Junction Temperat ure
150
o C
(
•) Pulse width limited by safe operating area
T YPE
VCES
VCE(sat)
IC
STGY50NB60HD
600 V
< 2.8 V
50 A
June 1999
1
2
3
MAX247
1/6


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