MICROPROCESSOR READ/WRITE TIMING NON MULTIPLEXED MODE (for references see figure 1a

and 2b).

Symbol

Parameter

Min.

Max.

Unit

RD, CS pulse width

260

ns

RD, recovery time

°C

°C and +70°C to +85°C

200

220

ns

ns

RD, CS low to data available

260

ns

RD or CS high to data Z

°C and +70°C to +85°C

130

160

ns

ns

Address setup time to READ active

0

ns

Address hold time to READ inactive

0

ns

Address setup time to WRITE active

30

ns

Addess hold time to WRITE inactive

50

ns

Address stable to data available

°C

°C and +70°C to +85°C

360

390

ns

ns

WR or CS pulse width

200

ns

Write recovery time

200

ns

Data setup time

100

ns

Data hold time

°C and +70°C to +85°C

20

40

ns

ns

Reset Pulse with

200

ns

Note: AC timings are tested at 0.8V and 2V with input levels of 0.4V and 2.4V.

MICROPROCESSOR READ/WRITE TIMING MULTIPLEXED MODE (for references see figure 1 and 2).

Symbol

Parameter

Min.

Max.

Unit

RD, CS pulse width

260

ns

RD, recovery time

°C and +70°C to +85°C

200

220

ns

ns

RD, CS low to data available

260

ns

RD or CS high to data Z

°C

130

160

ns

ns

ALE pulse width

100

ns

Address setup time

60

ns

Address hold time

50

ns

Address Z to RD low

0

ns

Address Z to WR Low

0

ns

Address stable to data available

°C

°C and +70°C to +85°C

360

390

ns

ns

WR or CS pulse width

200

ns

Write recovery time

200

ns

Data setup time

100

ns

Data hold time

°C

°C and +70°C to +85°C

20

40

ns

ns

Reset Pulse with

200

ns

Note: AC timings are tested at 0.8V and 2V with input levels of 0.4V and 2.4V.

Si Timing (at 10% of final value)

Symbol

Parameter

Test condition

Typ.

Max.

Unit

Si output enable time (from LER)

Ω

25

µs

Si output disable time (from LER or RESET)

3

6

µs

STLC5444

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