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USBLC6-4 데이터시트(PDF) 6 Page - STMicroelectronics

부품명 USBLC6-4
상세설명  Very low capacitance ESD protection
PDF  13 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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USBLC6-4 데이터시트(HTML) 6 Page - STMicroelectronics

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Technical information
USBLC6-4
6/13
Note:
The measurements have been done with the USBLC6-4SC6 in open circuit.
Important:
A good precaution to take is to put the protection device as close as possible to the
disturbance source (generally the connector).
2.4
Crosstalk behavior
2.4.1
Crosstalk phenomenon
Figure 11.
Crosstalk phenomenon
The crosstalk phenomenon is due to the coupling between 2 lines. The coupling factor (
β12
or
β21) increases when the gap across lines decreases, particularly in silicon dice. In the
above example the expected signal on load RL2 is α2VG2, in fact the real voltage at this point
has got an extra value
β21VG1. This part of the VG1 signal represents the effect of the
crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into
account when the drivers impose fast digital data or high frequency analog signals in the
disturbing line. The perturbed line will be more affected if it works with low voltage signal or
high load impedance (few k
Ω).
Figure 9.
Remaining voltage after the
USBLC6-4SC6 during positive ESD
surge
Figure 10.
Remaining voltage after the
USBLC6-4SC6 during negative ESD
surge
Line 1
Line 2
VG1
VG2
RG1
RG2
DRIVERS
RL1
RL2
RECEIVERS
α
β
+
1
12
VG1
VG2
α
β
+
2
21
VG2
VG1



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