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EMIF02-USB02F2 데이터시트(PDF) 2 Page - STMicroelectronics |
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EMIF02-USB02F2 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics EMIF02-USB02F2 2/7 1 Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter and test conditions Value Unit VPP ESD discharge IEC 61000-4-2, air discharge ESD discharge IEC 61000-4-2, contact discharge 15 8 kV Tj Junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between input and output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 V IRM VRM = 3V 0.1 0.5 µA Cline @ 0V 50 pF R1,R2 Tolerance ± 5% 33 Ω R3 Tolerance ± 5% 1.3 k Ω R4 Tolerance ± 5% 10 k Ω VF @ 1 mA (D1 diode) 1 V I V IPP VCL VBR VRM IR IRM IRM IR IPP VRM VBR VCL |
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