L9380 datasheet(8/18 Pages) STMICROELECTRONICS

8 / 18 page

Electrical specifications

L9380

8/18

Function is given for supply voltage down to 5.5V.

Function means: the channels are controlled from the inputs, some other parameters may

exceed the limit. In this case the programming voltage and timer threshold will be lower. This

leads to a lower protection threshold and time.

ICP

Charge pump current

VS = 12 V, VCP = 20 V, Tj ≥ 25 °C

-70

-45

µA

VS = 12 V, VCP = 20 V, Tj < 25 °C

-70

-38

µA

tCP

Charging time

VCP = VS + 8 V CCP = 100 pF

200

µs

VSCP off Overvoltage shut down

VSCP hys Overvoltage shut down hysteresis

(1)

200

1000

fCP

Charge pump frequency (1)

100

250

400

KHz

Gate drivers

IGSo

Gate source current

VG = VS

-5

-3

-1

IGSi

Gate sink current

VG ≥ 0.8 V

IGCP

Charge pump current on the gate

VS = 12 V, VG = 20 V, Tj ≥ 25 °C

-60

-35

µA

VS = 12V, VG = 20 V, Tj < 25 °C

-60

-28

µA

Drain - source sensing

VPR

Bias current programming voltage 10 µA

≤ I

PR ≤ 100 µA; VD ≥ 4 V

1.822.2

ID Leak

Drain pin leakage current

VS = 0 V; VD =14 V

Drain pin bias current

VS ≥ VD + 1 V; VD ≥ 5 V

0.9 IPR

1.1 IPR

ISmax

Source pin input current

VS ≥ VD + 1 V; VD ≥ 7 V

VHYST

Comparator hysteresis

Timer

VTHi

Timer threshold high

4.4

4.8

VTLo

Timer threshold low

0.3

0.4

0.5

Timer current

IN = 5 V; VT = 2 V

IN = 0 V; VS < VD;

VD ≥ 5 V; VT = 2 V

0.4 IPR

-0.6

IPR

0.6 IPR

-0.4

IPR

Inputs

VLOW

Input enable low voltage

-0.3

VHIGH

Input enable high voltage

VINhys

Input enable hysteresis(1)

200

500

IIN

Input source current

VIN ≤ 3 V

-30

-5

μA

IEN

Enable sink current

VEN ≥ 1 V

μA

Transfer time IN/ENABLE

VS = 14 V VG = VS; Open Gate

2.5

µs

Not measured guaranteed by design.

Table 5.

Electrical characteristics (continued)

(7 V

≤ V

S ≤ 18.5 V; -40° C ≤ TJ ≤ 150 °C, unless otherwise specified.)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

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